5STP03D6500 control thyristor is designed with patented free-floating silicon technology, low on-state and switching losses, optimum power handling capability and interdigitated amplifying gate. It is designed for traction, energy and industrial applications.
This document is a technical datasheet for the ABB 5STP03D6500 Control Thyristor. It details the device's specifications, including maximum rated values for blocking voltage and current, as well as characteristic values for on-state performance.
The thyristor utilizes patented free-floating silicon technology to achieve low on-state and switching losses, making it suitable for traction, energy, and industrial applications. The datasheet provides comprehensive data on thermal resistance, gate triggering parameters, and mechanical mounting requirements. This manual is written in Chinese.
| Max surge peak forward and reverse blocking voltage | 6500 V |
|---|---|
| Max repetitive peak forward and reverse blocking voltage | 6500 V |
| Average on-state current (Half sine wave) | 380 A |
| RMS on-state current | 600 A |
| Peak non-repetitive surge current (tp = 10 ms) | 4.7·10³ A |
| Thermal resistance junction to case (Double-side cooled) | 36 K/kW |
| Gate trigger voltage (Tvj = 25 °C) | 2.6 V |
The device is designed for traction, energy, and industrial applications.
It uses patented free-floating silicon technology to achieve low on-state and switching losses.
The datasheet provides a graph for max. permissible case temperature versus mean on-state current, but does not state a single fixed limit.