ABB 5STP25M5200 Control Thyristor datasheet. This thyristor features a patented free-floating silicon technology, low on-state and switching losses, designed for traction, energy and industrial applications, optimum power handling capability and interdigitated amplifying gate.
This document is a technical datasheet for the ABB 5STP25M5200 Phase Control Thyristor. It highlights the device's use of patented free-floating silicon technology, which provides low on-state and switching losses suitable for traction, energy, and industrial applications.
The datasheet details maximum rated values such as blocking voltage (5200 V), average on-state current (2537 A), and peak non-repetitive surge current. It also includes characteristic values for thermal resistance, gate triggering parameters, and switching times, along with mechanical data regarding mounting force and dimensions.
| Max surge peak forward and reverse blocking voltage | 5200 V |
|---|---|
| Max repetitive peak forward and reverse blocking voltage | 5200 V |
| Average on-state current (Half sine wave) | 2537 A |
| RMS on-state current | 3985 A |
| Peak non-repetitive surge current (tp = 10 ms) | 50.5·10³ A |
| Operating junction temperature range | -40 to 125 °C |
| Thermal resistance junction to case (Double-side cooled) | 9 K/kW |
| Gate trigger voltage (Tvj = 25 °C) | 2.6 V |
It uses patented free-floating silicon technology.
The device is designed for traction, energy, and industrial applications.
The recommended mounting force ranges from 63 to 84 kN.