ROHM Manuals (Industrial)

RU1E002SP is a 4V drive Pch MOSFET produced by ROHM. It has high-speed switching, small package (UMT3F) and 4V drive.

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RTR040N03 is a Nch MOS FET with the following features: 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).

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The RTR025N05 is a N-channel MOSFET from ROHM. It has a low on-resistance, built-in G-S protection diode and a small surface mount package.

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The RTR025N03 is a N-channel MOSFET with a low on-resistance and a space saving-small surface mount package (TSMT3).

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This document describes the features and characteristics of the RTR020N05 transistor, including low on-resistance, small surface mount package, and low voltage drive.

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This document describes the features and characteristics of the RTQ045N03 Transistors Rev.C 1/3 2.5V Drive Nch MOS FET, including low on-resistance, built-in G-S protection diode, and small surface mount package. The product is suitable for power switching and DC / DC converters.

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RTQ035N03 is a ROHM N-channel MOSFET with low on-resistance, small package size and low voltage drive. Applications include switch mode power supplies, LED drivers, etc.

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This document introduces the RTQ020N05 product from ROHM. The product is a low voltage drive N-channel MOSFET with low on-resistance and a small surface mount package. It is mainly used in switching circuits. The document also provides detailed information on the product's dimensions, maximum ratings, thermal resistance, and electrical characteristics.

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RTQ020N03 is a N-channel MOSFET produced by ROHM. It has the advantages of low on-resistance, small package and low drive voltage. It is suitable for switch power supply, motor drive and other applications.

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RTL035N03 is a silicon N-channel MOSFET with low on-resistance, space-saving small surface mount package (TUMT6) and low voltage drive (2.5V drive). It can be used for switching applications.

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RTF025N03 Nch MOSFET is a 2.5V drive product with features of low on-resistance, small size, and low voltage drive.

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This is a datasheet for RTF016N05 Nch 45V 1.6A Power MOSFET, which introduces its features and characteristics, such as low on-resistance, built-in G-S protection diode, and small surface mount package.

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rtf015n03 is a nch mosfet produced by rohm company, which has the characteristics of low on-resistance, small size and low drive voltage. it is suitable for switching circuits

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This document describes the features and characteristics of the ROHM RT1E060XN Nch 30V 6A Power MOSFET, including low on-resistance, built-in G-S protection diode, small surface mount package, etc.

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The 4V Drive Pch MOSFET RT1E050RP is a silicon P-channel MOSFET with low on-resistance, high power package, and 4V drive capability. It is suitable for switching applications.

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RT1E040RP is a P-channel MOSFET produced by ROHM. Its features are low on-resistance, high power package, and 4V drive.

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RT1C060UN Nch 20V 6A Power MOSFET is a low on-resistance power MOSFET device with built-in G-S Protection Diode, small Surface Mount Package (TSST8), Pb-free lead plating and so on.

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RT1A060AP is a low voltage drive (1.5V drive) P-channel MOSFET produced by ROHM. It has low on-resistance and small package, and is suitable for switching applications.

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The 1.5V Drive Pch MOSFET RT1A050ZP is a low voltage drive P-channel MOSFET produced by ROHM. It has low on-resistance, high power package and low voltage drive, and is suitable for switching circuits.

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RT1A045AP is a low on-resistance, power MOSFET with built-in G-S Protection Diode, small TSST8 package and Pb-free lead plating, RoHS compliant.

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