ROHM Manuals (Industrial)

R6015ANJ is a silicon N-channel MOSFET with low on-resistance, fast switching speed, gate-source voltage (VGSS) guaranteed to be ±30V, simple drive circuits, and easy parallel use.

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R6015ANX is a Nch 600V 15A power MOSFET from ROHM. The device features low on-resistance, fast switching speed, simple drive circuits, and easy parallel use.

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R6015ANZ is a N-channel MOSFET from ROHM with low on-resistance, low input capacitance and high ESD performance, suitable for switching applications.

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This data sheet is about R6015FNX, which is a high-performance MOSFET with fast reverse recovery time, low on-resistance, fast switching speed, simple drive circuits and easy parallel use.

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This document describes the features and characteristics of the R6018ANX Nch 600V 18A power MOSFET produced by ROHM, including low on-resistance, fast switching speed, and ease of parallel use.

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R6020ANZ is a N-channel MOSFET from ROHM company. It features low on-resistance, low input capacitance and high ESD, and is suitable for switching applications.

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This document describes the R6046ANZ Nch MOSFET manufactured by ROHM Co. Ltd. It features low on-resistance, low input capacitance, and high ESD.

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R6046FNZ is a N-channel MOSFET produced by ROHM. It has low on-resistance, low input capacitance and high ESD characteristics. It is suitable for switching power supplies.

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This document is a datasheet from ROHM Co., Ltd., providing information about the structure, dimensions, features, and applications of the R8002ANX 10V Drive Nch MOSFET.

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This document describes the features and characteristics of ROHM's R8008ANX 10V Drive Nch MOSFET, including low on-resistance, low input capacitance, and high ESD. This MOSFET is primarily used for switching applications.

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RAF040P01 is a low-voltage P-channel MOSFET from ROHM. It has a maximum on-resistance of only 2.4mΩ, a drain-source voltage of -12V and a gate-source voltage of 0 to -8V. This product is suitable for use in switch-mode power supplies, lighting control and motor control applications.

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RAL025P01 is a low voltage drive P channel MOSFET from ROHM. It features low on-resistance, small high power package, low voltage drive and is suitable for switching applications.

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RAL035P01 1.5V Drive Pch MOSFET is a ROHM product with low on-resistance, small high power package and low voltage drive (1.5V). It is widely used in switch power supply and other applications.

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RAL045P01 is a 1.5V low-voltage P-channel MOSFET from ROHM. It features low on-resistance, small package and high power. It is suitable for switching power supplies and other applications.

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This document is the data sheet of RAQ045P01, which introduces the structure, dimensions, application, packaging specifications, internal circuit, absolute maximum ratings, thermal resistance, electrical characteristics, etc. of the product.

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This document describes the features and characteristics of the RCD060N25 10V Drive Nch MOSFET product produced by ROHM, including low on-resistance, high-speed switching, wide range of SOA, simple drive circuits, and easy parallel use.

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RCD075N20 is a 10V drive N-channel MOSFET with low on-resistance, high-speed switching, and a wide range of SOA. It is suitable for switching applications and has the advantages of simple drive circuits and easy parallel use.

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The RCD080N25 is a N-channel MOSFET produced by ROHM. Its features are high-speed switching, low impedance, and easy to use.

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RCD100N20 is a 10V drive Nch MOSFET with features of low on-resistance, high-speed switching, wide range of SOA, simple drive circuits, and easy parallel use. It is suitable for switching applications.

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