ROHM Manuals (Industrial)

RVQ040N05 is a 45V 4A power MOSFET with features such as low on-resistance, built-in G-S protection diode, and small surface mount package.

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1.5V Drive Pch MOSFET RW1A013ZP is a silicon P-channel MOSFET produced by ROHM. It has the characteristics of low on-resistance, high power package and low voltage drive. It is suitable for inner circuit switching.

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The RW1A020ZP is a low on-resistance, high power package, low voltage drive (1.5V) silicon P-channel MOSFET from ROHM. It is suitable for inner circuit switching applications.

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1.5V Drive Pch MOSFET RW1A025AP is a low voltage drive p-channel mosfet produced by rohm company, with the characteristics of low on-resistance, small size and low voltage drive

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RW1A030AP is a low voltage drive P-channel MOSFET device produced by ROHM. It is suitable for switching applications. The main features include low on-resistance, small high power package, and low voltage drive.

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This datasheet is about ROHM's RW1C015UN Nch MOSFET. This MOSFET has low-voltage drive characteristics, with a rated maximum voltage of 20V, a maximum current of 1.5A, and a maximum power dissipation of 3W.

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RW1C020UN is a N-channel MOSFET produced by ROHM company. It features low on-resistance, built-in G-S protection diode, space saving, small surface mount package and low voltage drive.

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RW1C025ZP is a low voltage drive, small high power MOSFET from ROHM.

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RW1E015RP is a 4V drive Pch MOSFET produced by ROHM company. It features low on-resistance, space saving, high power package, low voltage drive, etc. It is mainly used in switching power supplies and other fields.

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RW1E025RP is a P-channel MOSFET with low on-resistance, small high power package, and low drive voltage (4V). It is suitable for switching applications.

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4V Drive Nch MOSFET RXH070N03 is a low drive MOSFET with low on-resistance, built-in G-S protection diode and small package. It is suitable for switching applications.

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This document describes the features and dimensions of ROHM's 4V Drive Nch MOSFET RXH090N03. The product features low on-resistance, built-in G-S protection diode, and a small surface mount package (SOP8), making it suitable for switching applications.

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RXH100N03 is a N-channel MOSFET produced by ROHM. Its features are low on-resistance, built-in G-S protection diode and SOP8 package.

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RXH125N03 is a low on-resistance N-channel MOSFET with built-in G-S protection diode from ROHM. It is suitable for switching applications.

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RQX040N03 is a Nch 30V 4A power MOSFET produced by ROHM. It has the characteristics of low on-resistance, built-in G-S protection diode and small package.

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RXR035N03 is a N-channel MOSFET with low on-resistance, built-in G-S Protection Diode and small Surface Mount Package. It is suitable for switching applications.

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This document describes the features and characteristics of the RYC002N05 Nch MOSFET produced by ROHM, including high-speed switching, small package size, and ultra-low voltage drive.

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This document introduces the structure, dimensions, features, and applications of ROHM's 0.9V drive N-channel MOSFET RYE002N05. The product features high-speed switching, small package size (EMT3), and ultra-low voltage drive.

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RYM002N05 is a N-channel MOSFET from ROHM company. It features high switching speed, small package and 0.9V low drive voltage, suitable for switching applications.

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