ROHM Manuals (Industrial)

This document describes the features and characteristics of the RCJ330N25 10V Drive Nch MOSFET product from ROHM, including low on-resistance, fast switching speed, gate-source voltage range of ±30V, and high package power.

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RCX080N25 is a low-voltage N-channel MOSFET produced by ROHM. It features low on-resistance, low input capacitance, and high ESD. It is suitable for switching applications.

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RCX120N20 is a N-channel MOSFET produced by ROHM Company. It has the characteristics of low on-resistance, low input capacitance, high ESD, and is suitable for switching power supplies, drive circuits and other applications.

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RCX120N25 is a N-channel MOSFET from ROHM. It features low on-resistance, high switching speed, guaranteed gate-source voltage of ±30V, and is suitable for applications such as switch-mode power supplies and inverters.

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RCX330N25 is a N-channel MOSFET produced by ROHM. This product has low on-resistance, fast switching speed, gate voltage ±30V, high package power and other features. It is suitable for switching circuits.

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RHP020N06 is a N-channel MOSFET from ROHM. It features low on-resistance, high switching speed and wide SOA. It is suitable for switching circuits.

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RHP030N03 is a 4V driven Nch MOSFET with low on-resistance and low gate voltage threshold, suitable for switching circuits

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RJP020N06 is a low on-resistance and low voltage drive N-channel MOSFET in the MPT3 series

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RMW130N03 is a high power, high speed switching, low on-resistance N-channel MOSFET from ROHM, and is used in switching power supplies.

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RMW150N03 is a 4.5V drive N-channel MOSFET from ROHM. It has a high power package, high switching speed and low on-resistance.

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RMW200N03 is a high-voltage N-channel MOSFET produced by ROHM Company. Its features are high power package, high switching speed and low on-resistance, which is suitable for switching applications.

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RMW280N03 is a N-channel MOSFET produced by ROHM. Its features are high power package, high switching speed, low on-resistance and low drive voltage.

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1.5V Drive Pch MOSFET RQ1A060ZP is a low voltage drive, high power silicon P-channel MOSFET.

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1.5V Drive Pch MOSFET RQ1A070ZP is a silicon P-channel MOSFET with low on-resistance, low voltage drive (1.5 V), and high power package. It is suitable for switching applications.

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RQ1C075UN is a low voltage drive N-channel MOSFET with low on-resistance, high power package and 1.5V drive characteristic.

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RQ1E050RP is a P-channel MOSFET produced by ROHM. The maximum operating voltage is 4V, the on-resistance is low, and it is suitable for switching circuits.

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The RQ1E070RP is an N-channel power MOSFET with a maximum rated voltage of -30V and a maximum continuous drain current of -7A. It features low on-resistance, built-in G-S protection diode, small surface mount package (TSMT8) and lead-free lead plating, RoHS compliant.

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This document introduces the structure, dimensions, features, and applications of ROHM's RQ1E075XN 4V Drive Nch MOSFET. It features low on-resistance, built-in G-S protection diode, and small surface mount package (TSMT8).

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