ROHM Manuals (Industrial)

This document describes the features and characteristics of ROHM's 10V Drive Nch MOSFET R5009FNX, including fast reverse recovery time, low on-resistance, and fast switching speed. The product is suitable for switching applications and has the advantages of simple drive circuits and easy parallel use.

File format: PDF Size:1027 KB

File format: PDF Size:0 KB

R5011FNX is a 10V drive Nch MOSFET from ROHM. It features fast reverse recovery time, low on-resistance, fast switching speed, etc. It is suitable for switching circuits.

File format: PDF Size:284 KB

R5013ANJ is a 10V drive Nch MOSFET produced by ROHM Corporation. It has the characteristics of low on-resistance, fast switching speed, guaranteed gate-source voltage (VGSS) of ±30V, simple drive circuits and easy parallel use.

File format: PDF Size:263 KB

The R5013ANX is a N-channel MOSFET produced by ROHM. Its features are fast switching speed, wide safe operating area, simple drive circuit and easy parallel use. It is suitable for switching power supplies and other applications.

File format: PDF Size:239 KB

R5016ANJ is a 10V drive Nch MOSFET from ROHM. It features low on-resistance, fast switching speed, wide SOA, and can be used in simple drive circuits. It is suitable for inner circuit switching applications.

File format: PDF Size:280 KB

R5016ANX is a N-channel MOSFET launched by Toshiba. It is mainly used in switching power supplies. This product has the characteristics of low on-resistance, fast switching speed, wide safe operating area, etc.

File format: PDF Size:217 KB

R5016FNX is a 10V drive Nch MOSFET with low on-resistance, low input capacitance and high ESD. It is suitable for switching applications.

File format: PDF Size:1196 KB

This document describes the features and applications of ROHM's R5019ANX 10V Nch MOSFET, including low on-resistance, low input capacitance, and high ESD. It also provides the dimensions and absolute maximum ratings of the product, as well as thermal resistance and electrical characteristics.

File format: PDF Size:1188 KB

R5021ANX is a 10V drive Nch MOSFET launched by Toshiba. It features low on-resistance, high speed, simple drive and easy paralleling.

File format: PDF Size:233 KB

This datasheet introduces R5205CND, a low resistance, high speed switching N-channel MOSFET. It is suitable for switching applications.

File format: PDF Size:199 KB

This document is a datasheet for the ROHM R6006AND Nch MOSFET. The product features low on-resistance, high-speed switching, wide SOA, and is suitable for switching applications.

File format: PDF Size:529 KB

R6006ANX is a 600V 6A Nch power MOSFET from ROHM. It features a low on-resistance, fast switching speed, simple drive circuits, parallel use and RoHS compliance.

File format: PDF Size:1714 KB

R6008ANX is a high-voltage and high-power MOSFET produced by ROHM. Its maximum working voltage is 600V and its maximum continuous current is 8A. It has the characteristics of low on-resistance, fast switching speed, simple drive circuit, and easy parallel use.

File format: PDF Size:999 KB

R6008FNJ is a ROHM N-channel MOSFET with 10V drive, low on-resistance, fast switching speed, easy to drive, etc.

File format: PDF Size:1313 KB

The R6008FNX is a Nch 600V 8A Power MOSFET from ROHM. It features low on-resistance, fast switching speed, simple drive circuits, and is suitable for switching power supply applications.

File format: PDF Size:928 KB

R6010ANX is a low-voltage drive N-channel MOSFET with the following features: low on-resistance, fast switching speed, gate-source voltage guaranteed to be ±30V, simple drive circuits, and easy parallel use.

File format: PDF Size:1195 KB

This document describes the features and characteristics of the R6012ANJ 10V Drive Nch MOSFET produced by ROHM Co., Ltd., including low on-resistance, fast switching speed, gate-source voltage guaranteed to be ±30V, simple drive circuits, and easy parallel use.

File format: PDF Size:322 KB

This document describes the features and characteristics of the R6012ANX Nch 600V 12A Power MOSFET from ROHM Co. Ltd., including low on-resistance, fast switching speed, simple drive circuits, and easy parallel use.

File format: PDF Size:1020 KB

This document describes the features and characteristics of the ROHM R6012FNX 10V Drive Nch MOSFET, including fast reverse recovery time, low on-resistance, fast switching speed, etc.

File format: PDF Size:608 KB