Philips Manuals (Industrial)
PHILIPS BLF175 HF/VHF power MOS transistor handbook
BLF175 is a power MOS transistor produced by Philips Corporation. It has the characteristics of high power gain, low intermodulation distortion, easy power control, good thermal stability, etc.
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PHILIPS BLF147 VHF power MOS transistor handbook
The BLF147 VHF power MOS transistor is a silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range.
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PHILIPS BLF145 HF power MOS transistor handbook
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PHILIPS BLF1049 Base station LDMOS transistor handbook
BLF1049 is a LDMOS power transistor manufactured by Philips Semiconductors. It is used in GSM, EDGE and CDMA base stations and multi-carrier applications in the 800 to 1000 MHz frequency range. It has a maximum output power of 125W, a gain of 16.5dB, an efficiency of 54% and good anti-interference performance.
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PHILIPS BLF1048 UHF power LDMOS transistor handbook
The BLF1048 is a UHF power LDMOS transistor with high power gain, easy power control, and excellent ruggedness. It is designed for communication transmitter applications in the UHF frequency range.
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PHILIPS BLF1047 UHF power LDMOS transistor handbook
BLF1047 is a UHF power LDMOS transistor produced by Philips Semiconductors. It has the characteristics of high power gain, easy power control, excellent ruggedness, and is designed for broadband operation (HF to 1 GHz). It is suitable for communication transmitter applications in the UHF frequency range.
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PHILIPS BLF1046 UHF power LDMOS transistor handbook
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PHILIPS BLF1043 UHF power LDMOS transistor handbook
BLF1043 UHF power LDMOS transistor is a high power gain, easy power control, rugged and durable transistor, designed for broadband operation (HF to 1 GHz).
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PHILIPS BLF0810-90; BLF0810S-90 Base station LDMOS transistors handbook
BLF0810-90 and BLF0810S-90 are LDMOS transistors produced by Philips Semiconductors. They have high power gain, easy power control, excellent ruggedness, bottom source eliminates DC isolators, reducing common mode inductance, and are designed for broadband operation (750MHz to 1GHz).
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PHILIPS BLF0810-180; BLF0810S-180 Base station LDMOS transistors handbook
BLF0810-180 and BLF0810S-180 are base station LDMOS transistors designed for frequencies from 800 to 1000 MHz. They feature excellent thermal stability, easy power control, high power gain, and excellent ruggedness.
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PHILIPS PowerMOS transistor BUK456-100A/B handbook
BUK456-100A/B is an N-channel enhancement mode power MOS transistor suitable for various applications such as switched mode power supplies, motor control, welding, DC/DC and AC/DC converters. It features a drain-source voltage of 100V, a drain current of 34A, a total power dissipation of 150W, and a junction temperature of 175°C.
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PHILIPS PowerMOS transistor BUK456-200A/B handbook
BUK456-200 is an N-channel enhancement mode power MOS transistor, suitable for applications such as switched mode power supplies, motor control, welding, DC/DC and AC/DC converters.
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PHILIPS PowerMOS transistor BUK456-100B handbook(1)
BUK456-1000B is a N-channel enhancement mode field-effect power transistor from Philips Semiconductors. It is packaged in a TO220AB package and has a rated drain-source voltage of 1000V, a rated drain current of 3.1A and a rated total power dissipation of 125W.
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PHILIPS PowerMOS transistor BUK456-100B handbook
BUK456-1000B is a N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and general purpose switching applications.
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PHILIPS PowerMOS transistor BUK455-60H handbook
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PHILIPS PowerMOS transistor BUK455-60A/B handbook
BUK455-60A/B is a power field-effect transistor used in applications such as switched mode power supplies, motor control, welding, DC/DC, and AC/DC converters. It features a drain-source voltage of 60V, drain current of 41A, total power dissipation of 125W, and junction temperature of 175°C.
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PHILIPS PowerMOS transistor BUK455-100A/B handbook
BUK455-100A/B is a N-channel enhancement mode field effect power transistor in a plastic envelope from Philips Semiconductors. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.
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PHILIPS PowerMOS transistor BUK455-200A/B handbook
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PHILIPS PowerMOS transistor BUK454-800A/B handbook
This document describes the product specification of Philips Semiconductors' PowerMOS transistor BUK454-800A/B. The transistor is an N-channel enhancement mode field-effect power transistor, intended for use in switched mode power supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and general purpose switching resistance applications. Its features include a maximum drain-source voltage of 800V, maximum drain current of 2.4A, maximum total power dissipation of 85W, and drain-source on-state resistance of 6-8Ω.
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PHILIPS PowerMOS transistor BUK454-60H handbook
BUK454-60H is an N-channel enhancement mode power MOSFET transistor with a drain-source voltage of 60V and a drain current of 41A. The device is intended for use in automotive applications, Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and general purpose switching applications.
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