Philips Manuals (Industrial)

BLF245B is a VHF push-pull power MOS transistor produced by Philips Semiconductors. It features high power gain, easy power control, good thermal stability and excellent reliability.

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BLF245 is a VHF power MOS transistor with high power gain, low noise figure, easy power control, good thermal stability, and withstands full load mismatch.

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The BLF244 is a VHF power MOS transistor with high power gain, low noise figure, easy power control, good thermal stability, and the ability to withstand full load mismatch. It is designed as a silicon N-channel enhancement mode vertical D-MOS transistor for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. This product contains beryllium oxide and requires proper handling for safety.

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BLF2048 is a UHF push-pull power LDMOS transistor with high power gain, easy power control, and excellent ruggedness. It is designed for broadband operation (HF to 2.2 GHz). It is mainly used for common source class-AB operation in PCN and PCS applications in the 1800 to 2200 MHz frequency range.

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BLF225 is a VHF power MOS transistor produced by Philips company. It features easy power control, good thermal stability and withstands full load mismatch.

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BLF242 is a HF/VHF power MOS transistor produced by Philips Semiconductors. It has the characteristics of high power gain, low noise, easy power control, good thermal stability, etc.

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BLF2047L/90 is a high power gain, high efficiency, low power consumption UHF power LDMOS transistor produced by Philips Semiconductors. It is mainly used in PCN and PCS applications in the 1800 to 2000MHz frequency range.

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BLF2047 is a high power gain LDMOS transistor, featuring easy power control, excellent ruggedness, underside source eliminates DC isolators, reducing common mode inductance, designed for broadband operation (1.8 to 2.2 GHz). Internal input and output matching for high gain and efficiency.

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This is a high power gain LDMOS transistor with good ruggedness, designed for broadband operation and suitable for communication transmitter applications in the 1.8 to 2.2 GHz frequency range.

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BLF2043 is a high power LDMOS transistor produced by Philips. It has high power gain, easy power control, excellent ruggedness, source connected to the mounting base, eliminates DC isolators, reduces common mode inductance, and is designed for broadband operation (HF to 2.2 GHz).

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The BLF2022-90 is a 90 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. It features easy power control, excellent ruggedness, high power gain, excellent thermal stability and internal matching for ease of use.

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BLF2022-70 is a 70 W LDMOS power transistor produced by Philips Corporation. It is suitable for W-CDMA base stations and multi-carrier applications in the 2000 to 2200 MHz frequency range.

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BLF2022-30 is a 30 W LDMOS power transistor from Philips Semiconductors, designed for broadband operation (2000 to 2200 MHz) and used in RF power amplifiers for W-CDMA base stations and multicarrier applications.

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BLF2022-125 is a power transistor produced by Philips. It uses the SOT634A package and is mainly used in W-CDMA base stations and multi-carrier applications in the 2000 to 2200MHz frequency range. It has the characteristics of easy power control, ruggedness, high power gain, excellent thermal stability, etc.

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BLF2022-120 is a high power gain LDMOS transistor from Philips Semiconductors. It is designed for broadband operation (HF to 2.2 GHz).

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BLF202 is a HF/VHF power MOS transistor produced by Philips Semiconductors. It features high power gain, easy power control, gold metallization, good thermal stability and full load mismatch capability. It is suitable for communications transmitters in the HF/VHF range with a nominal supply voltage of 12.5V.

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BLF1822-10 is a UHF power LDMOS transistor with the following features: output power of 10W, gain of 18.5dB at 900MHz, 13.5dB at 2200MHz, efficiency of 39% at 900MHz, 34% at 2200MHz, dim of -31dBc at 900MHz, -28dBc at 2200MHz, etc.

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This document describes the features and characteristics of the BLF1820-90 UHF power LDMOS transistor, including output power, gain, efficiency, suppression, etc. It is suitable for GSM, EDGE, CDMA base stations, and multicarrier applications.

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BLF1820-70 is a 70W LDMOS power transistor from Philips, designed for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range.

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BLF177 is a high power MOS transistor produced by Philips Semiconductors. It has high power gain, low intermodulation distortion, easy power control, good thermal stability and full load matching characteristics.

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