PHILIPS PowerMOS transistor BUK456-100B handbook(1)

Update: 01 October, 2023

BUK456-1000B is a N-channel enhancement mode field-effect power transistor from Philips Semiconductors. It is packaged in a TO220AB package and has a rated drain-source voltage of 1000V, a rated drain current of 3.1A and a rated total power dissipation of 125W.

Brand: Philips

File format: PDF

Size: 64 KB

MD5 Checksum: AD445DF104F2254870924DFCBF2EEC6E

Publication date: 06 July, 2012

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PDF Link: PHILIPS PowerMOS transistor BUK456-100B handbook(1) PDF

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