INFINEON Manuals (Industrial)

This document describes the features and characteristics of the SPW32N50C3 Cool MOS™ power transistor, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, and improved transconductance.

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SPW24N60C3 is a CoolMOSTM power transistor with revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv /dt rating, ultra low effective capacitances and improved transconductance.

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This document describes the features and characteristics of the SPW24N60C3 CoolMOSTM power transistor, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv / dt rated, ultra low effective capacitances, improved transconductance.

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SPW21N50C3 is a power switch transistor launched by Toshiba, using TO247 package, its maximum voltage is 560V, current is 21A.

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This document describes the features and characteristics of the SPW20N60S5 Cool MOS™ power transistor, including new high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, and improved transconductance.

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The SPW20N60S5 is a high-voltage power transistor with a maximum voltage of 600 volts, a minimum resistance of 0.19 ohms, and a maximum current of 20 amperes. The transistor features new revolutionary high-voltage technology, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances, and improved transconductance.

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SPW20N60CFD is a power transistor from Dinghao. Its maximum voltage is 650V and rated current is 20.7A. The transistor has ultra low gate charge, extreme low reverse recovery charge, high peak current capability, intrinsic fast-recovery body diode etc.

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SPW20N60CFD is a high voltage power transistor from Dinghao. Its features include low gate charge, extreme dv/dt and extremely low reverse recovery charge.

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SPW20N60C3 is a power transistor of Dinghao brand, its features are new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, improved transconductance.

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SPW20N60C3 is a high voltage power transistor from Dinghao. Its maximum voltage is 650V, rated current is 20.7A, and it has the features of ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability and improved transconductance.

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The TLE 6285 is a single-wire transceiver with a LDO. It is chip by chip integrated circuit in a P-DSO-16-4 package. It works as an interface between the protocol controller and the physical bus. The TLE 6285 is especially suitable to drive the bus line in LIN systems in automotive and industrial applications. Furthermore, it can be used in standard ISO9141 systems. In order to reduce the current consumption the TLE 6285 offers a sleep operation mode. In this mode a voltage regulator can be controlled in order to minimize the current consumption of the whole application (VR in sleep mode <1µA!). The on-chip voltage regulator (VR) is designed for this application but it is also possible to use an external voltage regulator.

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This datasheet provides detailed information on the TLE6284G driver IC, including features, characteristics, and applications.

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TLE6284G is an H-bridge driver IC for MOSFET power stages with multiple protection functions. It is very similar to the TLE6281G. The major difference is that the Short Circuit protection level of the TLE6284G can be adjusted by external resistors or even disabled. The pin outs are different as well.

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TLE6282G is a dual half bridge driver IC with multiple protection functions, which can be used in DC-brush high current motor bridge in PWM control mode for 12, 24 and 42V powernet applications, and can be used as four fold lowside driver for unipolar 4 phase motor drives.

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This is a dual half bridge driver IC that is compatible with low ohm input N-channel MOSFETs, has independent MOSFET inputs, PWM frequency up to 50 kHz, works with supply voltage as low as 7.5V, low EMC sensitivity and emission, adjustable dead time with shoot through protection, deactivation of dead time and shoot through protection possible, short circuit protection for each Mosfet, driver undervoltage shut down, driver IC reverse polarity protection, disable function, TTL input characteristics, 1 bit diagnosis, integrated bootstrap diodes, etc. functions.

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This document describes the technical data and features of the TLE 6281G model, including input control, dead time, undervoltage protection, short circuit detection, and overtemperature warning. The product is designed for PWM control mode of DC brush high current motor bridges with 12V, 24V, and 42V power supplies.

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TLE6280GP is a 3-phase bridge driver IC for MOSFET power stages with multiple protection functions. This device fulfills requirements in 12V automotive applications.

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This datasheet provides detailed information on the features and characteristics of the TLE6280GP 3-phase bridge driver IC. The IC features multiple protection functions and is dedicated to 3-phase high current motor bridges in PWM control mode. The device fulfills requirements in automotive 12V applications.

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