INFINEON Manuals (Industrial)

IPP50R520CP CoolMOSTM Power Transistor is a power transistor with the lowest RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, Pb-free lead plating, RoHS compliant, qualified according to JEDEC1) for target applications. It is designed for hard- & softswitching SMPS topologies, DCM PFC for Lamp Ballast, PWM for Lamp Ballast, PDP and LCD TV.

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This document describes the features and characteristics of a product called VDS.

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The IKP10N60T is a low-loss IGBT that uses TrenchStop® and Fieldstop technology with soft, fast-recovery anti-parallel EmCon HE diode. IKP10N60T features very low Vce(sat) of 1.5 V; maximum junction temperature of 175 °C; short circuit withstand time of 5µs. It is designed for applications such as variable speed drive for washing machines, air conditioners and induction cooking, as well as uninterruptible power supply.

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The BAR63 series are low forward resistance (low insertion loss) and low capacitance (high isolation) PIN diodes, designed for high speed switching of RF signals.

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SPA06N60C3 CoolMOSTM Power Transistor features: New revolutionary high voltage technology, Ultra low gate charge, Periodic avalanche rated, High peak current capability, Ultra low effective capacitances, Extreme dv /dt rated, Improved transconductance, Fully isolated package (2500 V AC; 1 minute)

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The BSS138N is a N-channel enhancement mode logic level small signal MOSFET manufactured by Infineon.

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This document describes the parameters such as VDS, Tjmax, and the features and characteristics of the product.

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The IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G OptiMOS®2 Power-Transistor features the following: N-channel, normal level; Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); 175 °C operating temperature; Pb-free lead plating; RoHS compliant; Qualified according to JEDEC1) for target application; Ideal for high-frequency switching and synchronous rectification.

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This document describes the features and characteristics of the BFP405 NPN Silicon RF Transistor, which is suitable for low current applications and oscillators up to 12 GHz. It has a noise figure of 1.25 dB at 1.8 GHz and an outstanding gain of 23 dB at the same frequency. The transistor has a transition frequency of 25 GHz and utilizes gold metallization for high reliability.

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16-Bit Single-Chip Microcontroller

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The BSO119N03S is an N-channel logic level MOSFET with fast switching, excellent gate charge x R DS(on) product (FOM), very low on-resistance R DS(on), superior thermal resistance, avalanche rating, lead-free plating and RoHS compliance.

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This document describes the features and characteristics of the SPN03N60C3 Cool MOS™ power transistor, including new revolutionary high voltage technology, ultra low gate charge, extreme dv/dt rating, ultra low effective capacitances.

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BFR360F is an NPN silicon RF transistor in the BFR series. It is suitable for low-noise amplifiers and oscillators below 3.5 GHz.

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IPB60R600CP is a model of the IPB60 series. It is a power transistor produced by ON Semiconductor. Its features are the lowest RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, JEDEC1) qualified, lead plating, and RoHS compliant.

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TDA 5220 ASK/FSK Single Conversion Receiver is a wireless control component.

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This is the 2.4 edition of the PFET data sheet released by Texas Instruments on September 21, 2021, which details the characteristics and electrical parameters of the device

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This document describes the features and characteristics of the SPI11N60CFD Cool MOS™ power transistor, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, intrinsic fast-recovery body diode, extreme low reverse recovery charge, etc.

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BA592/BA892 is a low-power silicon RF switching diode, mainly used in TV/VTR tuners and mobile devices. It has a low forward resistance (typically 0.45Ω@3mA) and small parasitic capacitance.

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BFR340F is a NPN silicon RF transistor manufactured by Texas Instruments. Its features are low voltage/low current operation, transistor frequency of 14GHz, high insertion gain, ideal for low current amplifiers and oscillators.

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SPP07N65C3, SPI07N65C3 and SPA07N65C3 are high voltage Cool MOS™ power transistors. They feature ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, improved transconductance, and fully isolated package (2500 VAC; 1 minute).

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