INFINEON Manuals (Industrial)

SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 is a new revolutionary high voltage MOS power transistor with ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.

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This product is a high voltage power transistor with a maximum voltage of 800V and a maximum current of 11A. The product has the characteristics of ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitance and improved transconductance.

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SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOS™ Power Transistor features 650 V VDS, 0.38 RDS(on) and 11 A ID. Its features are new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability and improved transconductance.

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SPA11N60CFD is a new high voltage power transistor with an intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, periodic avalanche rating, etc.

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SPA11N60CFD CoolMOSTM power transistor features extremely low reverse recovery charge and ultra-low gate charge, extreme dv/dt rating and high peak current capability.

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This product is a high voltage power transistor from Dinghao company. Its maximum voltage is 650V and current is 11A. The features are new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, improved transconductance.

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This document introduces the features and characteristics of the BB639/BB659 silicon variable capacitance diodes, which are suitable for tuning the extended frequency band in VHF TV/VTR tuners. They have high capacitance ratio, low series inductance, low series resistance, excellent uniformity, and matching.

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This document is about SPW52N50C3 technical information. It mainly introduces the features and characteristics of the product, including RDS(on), ID, Avalanche energy, EAS, Avalanche current, IAR, Gate source voltage, VGS, Power dissipation, Tj, Tstg, dv/dt, RthJC, RthJA, Tsold.

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SPW47N60CFD is a high-voltage power transistor launched by Diodes Inc. This device uses advanced CoolMOSTM technology and features extremely low reverse recovery charge, ultra-low gate charge, extreme dv/dt ratings, high peak current capability, periodic avalanche ratings, etc.

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This document describes the features and characteristics of SPW47N60C3 Cool MOS™ Power Transistor, including high voltage technology, low on-resistance, low gate charge, periodic avalanche capacity, extreme dv/dt capability, and ultra-low effective capacitance.

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spww52n50c3 is a power transistor of p-to247 type, which is the top rds(on) in the world, has ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitance and improved transconductance.

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The SPW47N60S5 is a power transistor in P-TO247 package. Its maximum voltage is 600V and the minimum on-resistance is 0.07 Ω. The maximum current is 47A.

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The product is a power transistor with a rated voltage of 600V, a conduction resistance of 0.07 ohms and a maximum current of 47A. The product has ultra-low gate charge, ultra-low effective capacitance, ultra-high current carrying capacity, ultra-high dv/dt, periodic avalanche rating and improved transconductance characteristics.

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SPW47N60C3 is a Cool MOS™ Power Transistor with a rated junction temperature of 650V, RDS(on) 0.07 Ohm, ID 47 A. Product features include: new revolutionary high voltage technology, world's best RDS(on) in TO 247, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances.

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This document describes the features and characteristics of the SPW47N60C2 Cool MOS™ Power Transistor, including high voltage technology, low RDS(on), low gate charge, improved noise immunity, etc.

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SPW47N60C2 is a power transistor from Dinghao brand. Its features are new revolutionary high voltage technology, best RDS(on) in TO 247, ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved noise immunity.

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The SPW35N60CFD CoolMOSTM power transistor features new revolutionary high voltage technology, intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, periodic avalanche rating, etc.

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This product is a high voltage power transistor, with ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitance and improved transconductance

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This datasheet records the technical characteristics of the SPW32N50C3 product, including rated current, maximum voltage, maximum current, gate source voltage, switching frequency, operating temperature and other parameters.

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