INFINEON Manuals (Industrial)

IPW90R1K2C3 CoolMOS™ Power Transistor Features the lowest figure-of-merit RON x Qg, extreme dv/dt rating, high peak current capability and is qualified according to JEDEC1) for target applications. This transistor is Pb-free lead plated, RoHS compliant and has ultra low gate charge. It is designed for Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications and Industrial SMPS.

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The IPW50R250CP CoolMOSTM Power Transistor is a power switch that features the lowest RON x Qg and ultra-low gate charge, can withstand extreme dv / dt, has high peak current capability, is RoHS compliant, and is qualified according to JEDEC1) for target applications

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This is a product datasheet from Infineon Technologies AG, which describes the features and characteristics of the XC164TM 16-bit single-chip microcontroller.

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This document is about the absolute maximum ratings of SFH6943, including the emitter (GaAlAs) reverse voltage, forward current, peak forward current, total power dissipation, detector (Si phototransistor) collector-emitter voltage, emitter-collector voltage, collector current, peak collector current, total power dissipation, package insulation, creepage distance and other parameters.

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The SPA11N60CFD CoolMOSTM power transistor features new revolutionary high voltage technology, intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, periodic avalanche rating. It is qualified according to JEDEC0) for target applications.

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This document is an TDP calculation table from Infineon, which mainly introduces how to calculate TDP

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This document describes the features and characteristics of the BFT92 PNP Silicon RF Transistor, suitable for broadband amplifiers up to 2 GHz with a maximum collector current of 30 mA.

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This document introduces Infineon's switch mode power supply products, including ICs and discretes, and their applications in various electronic devices.

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BTS5236-2GS is an automotive power smart high-side power switch with two channels and an output on-state resistance of 50mΩ.

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IPP60R385CP CoolMOSTM Power Transistor is a MOSFET from STMicroelectronics with the lowest RON x Qg, ultra low gate charge, extreme dv/dt rating and high peak current capability.

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This document is a product summary of BSP 317 P SIPMOS small-signal transistor, describing its features and characteristics.

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XC164CM 16-Bit Single-Chip Microcontroller

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IPW60R045CP is a CoolMOSTM Power Transistor with the world's best Rds,on, ultra-low gate charge, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, lead-free lead plating; RoHS compliant, specially designed for: Hard switching SMPS topologies.

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BSP 298 is an N-channel enhancement mode small-signal field-effect transistor produced by STMicroelectronics. It features a high breakdown voltage (400V), large conduction current (0.5A), and fast switching speed (100ns).

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This document describes the features and characteristics of the TDK5100F 434 MHz ASK/FSK transmitter.

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The SPA07N60CFD CoolMOSTM power transistor features an intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra low gate charge, extreme dv/dt rating, high peak current capability, etc. It is designed for soft switching PWM stages, LCD and CRT TVs.

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This data sheet is for the BTS550P product. It mainly introduces the features and characteristics of the product, such as reverse battery protection, overload protection, current limiting, short circuit protection, overtemperature protection, overvoltage protection, output negative voltage clamping, fast deenergizing of inductive loads, low ohmic reverse current operation, diagnostic feedback with load current sense, open load detection, Vbb loss protection, and electrostatic discharge protection.

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This document is an addendum for BTS 5440 G Smart High-Side Power Switch and PCN datasheet. It describes the features and technical specifications of the product.

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The BTS 5434G is a four-channel, 60mΩ automotive power smart high-side power switch.

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The BTS 5434G is a four-channel, 60 mΩ automotive smart high-side power switch.

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