INFINEON Manuals (Industrial)

This document is a datasheet for NXP NTC thermistor, which introduces the product's functions, characteristics, specifications and parameters.

File format: PDF Size:1014 KB

This document describes the features and characteristics of the IPW50R140CP CoolMOSTM power transistor, including worldwide best R DS,on, lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rated, high peak current capability, etc.

File format: PDF Size:319 KB

BFP540 is an NPN silicon RF transistor with outstanding Noise Figure F=0.9dB and high reliability gold metallization, suitable for 1.8GHz highest gain low noise amplifier.

File format: PDF Size:164 KB

This document describes the features of the IPW60R299CP CoolMOSTM power transistor, including the lowest figure-of-merit R ONxQg, ultra-low gate charge, extreme dv/dt rating, and high peak current capability. The product is qualified according to JEDEC standards and is suitable for hard switching SMPS topologies.

File format: PDF Size:311 KB

SPW52N50C3 is a high voltage MOS power transistor with the world's best RDS(on), ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances and improved transconductance

File format: PDF Size:254 KB

This document is a product summary of BSP297 Rev. 1.21 SIPMOS small-signal transistor. The transistor is an N-channel enhancement mode MOSFET with a maximum drain-source voltage of 200V and a drain-source on-resistance of 1.8Ω. Its features include enhancement mode logic level, dv/dt rating, and PG-SOT-223 package.

File format: PDF Size:229 KB

File format: PDF Size:0 KB

This document provides a summary of the SN7002N SIPMOS small-signal transistor, released on July 21, 2005, in Rev. 2.2. The transistor is an N-channel enhancement mode device with logic level characteristics. It has a drain-source voltage of 60V, a drain-source on-resistance of 5Ω, and a drain current of 0.2A.

File format: PDF Size:960 KB

BUZ 30A is a N channel enhancement type avalanche rated power transistor

File format: PDF Size:411 KB

This datasheet lists the technical specifications of the FF300R12KE3 IGBT-module

File format: PDF Size:259 KB

BUZ 345 is an N-channel enhancement mode avalanche rated power transistor. It features a 100 V drain-source breakdown voltage, 41 A continuous drain current, and 0.045 Ω drain-source on-resistance. It is suitable for a variety of applications such as motor drives, power conversion, and lighting control.

File format: PDF Size:94 KB

This document describes the features and characteristics of the SPI80N08S2-07, SPP80N08S2-07, and SPB80N08S2-07 OptiMOS power transistors, released on May 9, 2003. These features include N-channel enhancement mode, 175°C operating temperature, avalanche rating, dv/dt rating, etc.

File format: PDF Size:428 KB

PROFET® BTS426L1 is a high side power switch launched by Texas Instruments. It has overload protection, current limitation, short circuit protection, thermal shutdown, overvoltage protection (including load dump) and other features. It can be applied to 12 V and 24 V DC grounded loads, replacing electromechanical relays, fuses and discrete circuits.

File format: PDF Size:328 KB

SPW07N60CFD CoolMOSTM Power Transistor is a power transistor with many features and characteristics, including intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra-low gate charge, extreme dv /dt rating, high peak current capability, etc. It is designed for applications such as soft switching PWM stages and LCD & CRT TVs.

File format: PDF Size:662 KB

BSS159N is an N-channel depletion mode small-signal transistor, rated for dv/dt, available with VGS(th) indicator on reel, lead-free lead-plating, RoHS compliant.

File format: PDF Size:309 KB

This document describes the features and characteristics of BSP324 SIPMOS power transistors, including N-channel, enhancement mode, logic level, and dv/dt rating.

File format: PDF Size:4277 KB

ITS 4141N is a Smart High-Side Power Switch for Industrial Applications. It features short circuit protection, current limitation, overload protection, overvoltage protection (including load dump), undervoltage shutdown and reverse battery protection.

File format: PDF Size:445 KB

File format: PDF Size:0 KB

The SDT05S60 is the world's first 600V Schottky diode, using a revolutionary semiconductor material - Silicon Carbide, with benchmark switching behavior, no reverse recovery, no temperature influence on the switching behavior and no forward recovery.

File format: PDF Size:210 KB

BFR 181W is a NPN silicon RF transistor, used for low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA, ft = 8 GHz, F = 1.45 dB, 900 MHz

File format: PDF Size:142 KB