P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
The NXP NX2020P1 is a P-channel enhancement mode Field-Effect Transistor (FET) designed for medium power applications. It utilizes Trench MOSFET technology and is housed in a leadless, ultra-thin Surface-Mounted Device (SMD) plastic package known as DFN2020MD-6 (SOT12020). This package features an exposed drain pad for excellent thermal conduction and tin-plated side pads for soldering.
The device is intended for use in charging switches for portable devices, DC-to-DC converters, and power management circuits in battery-driven systems such as hard disks and computers. Key specifications include a maximum drain-source voltage of 30 V and a maximum continuous drain current of 5 A at 25°C.
| Drain-source voltage | -30 V |
|---|---|
| Gate-source voltage | -12 to 12 V |
| Drain current | -5 A |
| Package type | DFN2020MD-6 (SOT1220) |
| Technology | Trench MOSFET |