This datasheet details the specifications, characteristics, and application information for the Vishay IRF740LC Power MOSFET, including absolute maximum…
The document describes the Vishay IRF740LC Power MOSFET, a low charge device utilizing LCDMOS technology. Key features include ultra-low gate charge, reduced gate drive requirements, and an enhanced 30 V VGS rating. The device is designed for high-frequency switching applications with improved efficiency and reduced switching losses.
| Drain-source voltage | 400 V |
|---|---|
| Continuous drain current | 10 A |
| Maximum power dissipation | 125 W |
| Operating junction temperature | -55 to +150 °C |
| Gate-source threshold voltage | 2.0 to 4.0 V |
| Drain-source on-state resistance | 0.55 Ω |
| Total gate charge | 39 nC |
The device is available in the TO-220AB package.
The datasheet provides information about parts that are RoHS-compliant and parts that are non-RoHS compliant, noting that parts with lead (Pb) terminations are not RoHS-compliant.
The maximum junction-to-ambient thermal resistance is 62 °C/W.