The Silan SVF20N50F/PN is a 20 A, 500 V N‑channel enhancement MOSFET with low RDS(on) and fast switching, detailed in this datasheet.
The SVF20N50F/PN is a high‑voltage N‑channel enhancement MOSFET manufactured by Silan using its F‑Cell™ planar high‑voltage VDMOS process. It offers low on‑resistance, fast switching speed, and high avalanche capability, making it suitable for AC‑DC power supplies, DC‑DC converters, and high‑voltage H‑bridge motor drivers.
Key electrical parameters include a 500 V drain‑source rating, 12.6 A continuous drain current at 25 °C, typical on‑resistance of 0.20 Ω at VGS=10 V, and a gate charge of 49.5 nC. The device is supplied in a TO‑220F‑3L (or TO‑3PN) package with detailed thermal and diode characteristics provided. This manual is written in Chinese.
| Drain‑Source Voltage (VDS) | 500 V |
|---|---|
| Gate Charge (Qg) | 49.5 nC |
| Package Type | TO‑220F‑3L (also TO‑3PN) |
The device is rated for a maximum drain‑source voltage of 500 V.
It is supplied in a TO‑220F‑3L package (also available in TO‑3PN).