This document describes the Toshiba 2SA1296 and 2SC3266 PNP and NPN transistors, which are suitable for low-frequency power amplification and power switching applications. The document also lists the maximum ratings and electrical characteristics of these transistors.
The 2SA1296 is a PNP silicon epitaxial transistor intended for low‑frequency power amplification and power switching applications. It is supplied in a JEDEC TO‑92 (JEITA SC‑43) package.
Key specifications include collector‑base voltage of -20 V, collector‑emitter voltage of -20 V, emitter‑base voltage of -6 V, a maximum collector current of 2 A, and a power dissipation of 750 mW at 25 °C. The document also outlines safe operating area limits and handling recommendations for reliable use. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | -20 V |
|---|---|
| Collector‑Emitter Voltage (Vcce) | -20 V |
| Emitter‑Base Voltage (Vebo) | -6 V |
| Maximum Collector Current (Ic) | 2 A |
| Maximum Base Current (Ib) | 0.05 A |
| Power Dissipation (Pd) | 750 mW (Ta = 25 °C) |
| Maximum Junction Temperature (Tj) | 150 °C |
The maximum collector current is 2 A.
The device can dissipate up to 750 mW at an ambient temperature of 25 °C.
It is supplied in a JEDEC TO‑92 (JEITA SC‑43) package.