The SRA2203SF is a PNP silicon transistor offered by A K Semiconductor. It features built‑in bias resistors to simplify circuit design, reduces part count, and provides high packing density for compact applications.
The datasheet lists absolute maximum ratings, electrical characteristics, and characteristic curves, including voltage limits, current ratings, power dissipation, gain, and transition frequency, enabling designers to evaluate suitability for switching and interface circuits.
| Maximum Collector‑Emitter Voltage (VCE) | -50 V |
|---|---|
| Maximum Emitter‑Base Voltage (VEB) | -40 V |
| Maximum Collector Current (IC) | -100 mA |
| Power Dissipation (PD) | 200 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55 ~ 150 °C |
| DC Current Gain (hFE) typical | 70‑120 |
| Transition Frequency (fT) | 200 MHz |
| Input Current (IB) | 0.36 mA |
| Output Cut‑off Current (IOC) | 500 nA |
The maximum collector‑emitter voltage is -50 V.
The typical DC current gain ranges from 70 to 120.
The transition frequency is specified as 200 MHz.
The device can dissipate up to 200 mW.