BISS Transistors

This document describes the features and benefits of BISS transistors, including low collector-emitter saturation voltage VCEsat, up to 5.8 A collector current capability IC, up to 15 A peak collector current ICM and high current gain hFE.


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Published
10 November, 2023
Updated
10 November, 2023
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7373CE7AD9C0F710E495FDECB1C052F8
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