MT3S20TU is a silicon NPN transistor produced by Toshiba. It has excellent low-noise and low distortion amplification characteristics and is suitable for low-noise and low distortion amplification applications in the VHF～UHF band.
This datasheet describes the Toshiba MT3S20TU silicon NPN epitaxial planar transistor, highlighting its low‑noise and high‑gain performance for VHF/UHF band amplification. Key characteristics such as transition frequency, noise figure and gain are provided.
The document includes absolute maximum ratings, microwave and electrical characteristics, package dimensions, and handling precautions required to avoid static‑discharge damage. It also contains legal and reliability notices for proper use in electronic equipment. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | 20 V |
|---|---|
| Collector‑Emitter Voltage (VcEo) | 12 V |
| Emitter‑Base Voltage (VEB0) | 15 V |
| Maximum Collector Current (Ic) | 80 mA |
| Maximum Power Dissipation (Pc) | 900 mW |
| Transition Frequency (fT) | 5‑7 GHz |
| Noise Figure (NF) at 1 GHz | 1.45 dB |
| Gain at 1 GHz | 12 dB |
| Operating Temperature Range | -55 °C to 150 °C |
| Package Size | 25.4 mm × 25.4 mm × 0.8 mm |
The maximum collector current is 80 mA.
Static‑electricity protection must be taken when handling the device, including grounding work surfaces, personnel and soldering equipment.
The transition frequency ranges from 5 GHz to 7 GHz.