MT3S16FS is a NPN type silicon EPI planar transistor launched by Toshiba. It is suitable for UHF band low voltage operation, emission and amplification applications. The product has high fT and excellent current dependence, and its feedback capacitance Cre is very flat.
The MT3S16FS is a silicon NPN epitaxial planar transistor designed for UHF low‑voltage operation, oscillation and amplification. It offers high transition frequency and low noise performance, making it suitable for high‑speed RF applications.
Key specifications include absolute maximum ratings such as Vcbo 10 V, VcEo 5 V, VEBo 2 V, collector current 60 mA, and power dissipation 85 mW. Microwave characteristics show a transition frequency above 4 GHz and a typical insertion gain of 45 dB at 1 GHz. The device is packaged in a 20 mm × 25 mm × 1.55 mm FR‑4 mount and weighs 0.6 mg. Handling notes stress electrostatic discharge (ESD) protection due to the device’s sensitivity. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | 10 V |
|---|---|
| Collector‑Emitter Voltage (VcEo) | 5 V |
| Emitter‑Base Voltage (VEBo) | 2 V |
| Collector Current (Ic) | 60 mA |
| Base Current (Ib) | 10 mA |
| Power Dissipation (Pc) | 85 mW |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55 °C to 125 °C |
The maximum collector‑emitter voltage is 5 V.
The device can be stored from –55 °C to 125 °C.
The datasheet is dated 2010‑08‑25.