MT3S22P is a silicon germanium NPN microwave transistor produced by Toshiba. It has the characteristics of low noise and low power consumption, and is suitable for low noise and low distortion amplification applications in the VHF~UHF band.
The MT3S22P is a silicon‑germanium NPN epitaxial planar transistor intended for VHF/UHF low‑noise, low‑distortion amplification. The sheet lists its key features, absolute maximum ratings and typical electrical performance.
Detailed specifications include collector‑base voltage, collector‑emitter voltage, transition frequency, noise figure and power dissipation. The document also contains handling precautions, reliability notes and usage restrictions for safety‑critical applications. This manual is written in Japanese.
| Output Third‑Order Intercept Point (OIP3) | 31‑35 dBm |
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The device is electrostatic‑sensitive; static‑discharge protection must be taken when handling it.