This document describes the features and characteristics of the TPCP8507 high-speed switching transistor produced by Toshiba. The transistor has a high DC current gain, low saturation voltage, and fast switching time. The document also provides the absolute maximum ratings and usage conditions for the product.
The TPCP8507 is a silicon NPN epitaxial transistor designed for high‑speed switching applications such as DC‑DC converters. It offers low saturation voltage and fast switching times, making it suitable for circuits requiring rapid response.
The document lists detailed electrical specifications, including voltage and current limits, gain (hFE) ranges, and switching times, as well as safety and handling guidelines. It also clarifies that the device is not intended for safety‑critical or high‑reliability applications such as aerospace, medical, or nuclear equipment. This manual is written in Japanese.
| Collector‑Base Voltage (VcBO) | 180 V (max) |
|---|---|
| Collector‑Emitter Voltage (VcEO) | 150 V (max) |
| Collector Current (Ic) | 1.0 A (max) |
| DC Current Gain (hFE) at VcE=2 V, Ic=0.1 A | 120 – 300 |
| Saturation Voltage (VCE(sat)) | 0.14 V (typical at Ic=0.3 A) |
| Switching Rise Time (tg) | 0.2 ns (typical) |
| Operating Temperature Range | -55 °C to 150 °C |
The device can withstand up to 180 V between collector and base.
The DC current gain (hFE) is typically between 120 and 300 at VcE = 2 V and Ic = 0.1 A.
The transistor is rated for operation from –55 °C up to 150 °C, with an absolute maximum junction temperature of 150 °C.