TLP665G(S) is a photocoupler launched by Toshiba. It consists of a phototransistor and a GaAs infrared emitting diode, and has the characteristics of high voltage resistance, low power consumption and high reliability.
The TLP665G(S) is a GaAs infrared LED‑phototriac optocoupler packaged in a 6‑pin DIP. It is intended for use in office equipment, household devices, triac driver circuits, and solid‑state relays. The document provides absolute maximum ratings, recommended operating conditions, and detailed electrical parameters.
Safety and handling notes emphasize that the device is not suitable for safety‑critical or high‑risk applications such as nuclear, aerospace, medical, or automotive systems. Users are advised to follow Toshiba’s reliability guidelines and applicable export regulations when integrating the component. This manual is written in Japanese.
| Maximum forward on‑state current (IF) | 100 mA (max) |
|---|---|
| Forward voltage at IF = 10 mA | 1.0 V (min) – 1.15 V (typ) – 1.3 V (max) |
| Reverse voltage (VR) | 5 V |
| Trigger LED current (IFT) | 5 mA – 10 mA |
| Isolation voltage | 5000 Vrms (min) |
| Surge current (1 cycle) | 12 A (10 ms, 10 % DC) |
The maximum on‑state current is 100 mA.