Hittite Microwave Corporation HMC326MS8G GaAs InGaP HBT MMIC Driver Amplifier Datasheet

The HMC326MS8G is a high-efficiency GaAs InGaP HBT MMIC driver amplifier from Hittite, which operates between 3.0 and 4.5 GHz and provides 21 dB of gain and +26 dBm of saturated power.


Hittite Microwave Corporation HMC326MS8G GaAs InGaP HBT MMIC Driver Amplifier Datasheet - cover page
Brand
Hittite
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
220 KB
Published
09 August, 2012
Updated
30 September, 2023
MD5 checksum
63CF96972E842C4774AF014B5869A2D4

About this manual

The HMC326MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Monolithic Microwave Integrated Circuit (MMIC) driver amplifier designed for frequencies between 3.0 and 4.5 GHz. It features an ultra-small MSOP8G package with an exposed base to improve RF and thermal performance, providing 21 dB of gain and +26 dBm of saturated output power from a +5.0V supply voltage.

What's inside

  • Typical Applications
  • Features
  • General Description
  • Electrical Specifications
  • Broadband Gain & Return Loss Response
  • Absolute Maximum Ratings
  • Outline Drawing
  • Evaluation PCB
  • Application Circuit

Specifications

Frequency Range3.0-4.5 GHz
Gain18 to 21 dB
Output Power for 1dB Compression (P1dB)21 to 23.5 dBm
Saturated Output Power (Psat)+26 dBm
Output Third Order Intercept (IP3)32 to 36 dBm
Noise Figure5 dB
Package TypeMSOP8G

Frequently asked questions

What are the typical applications for this amplifier?

It is ideal for Microwave Radios, Broadband Radio Systems, and Wireless Local Loop Driver Amplifier.

What is the operating temperature range?

The operating temperature range is -40 to +85 °C.

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