The HMC327MS8G is a high efficiency GaAs InGaP HBT MMIC Power Amplifier from Hittite Corporation. It operates between 3.0 and 4.0 GHz and provides 21 dB of gain, +30 dBm of saturated power, 45% PAE, and a supply voltage of +5.0 V. It also supports power down capability and has a low external part count.
The HMC327MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC power amplifier designed for frequencies between 3.0 and 4.0 GHz. It is packaged in a low cost, surface mount 8 leaded package with an exposed base to improve RF and thermal performance. The device provides 21 dB of gain and +30 dBm of saturated power at 45% PAE from a +5.0V supply voltage.
| Frequency Range | 3.0-4.0 GHz |
|---|---|
| Gain | 21 dB |
| Saturated Power | +30 dBm |
| Supply Voltage | +5.0 V |
| Output Power for 1dB Compression | 27 dBm |
| Output Third Order Intercept | 40 dBm |
| Noise Figure | 5.0 dB |
| Operating Temperature | -40 to +85 °C |
The amplifier operates between 3.0 and 4.0 GHz.