Hittite HMC311LP3 InGaP HBT Gain Block MMIC Amplifier Datasheet

The HMC311LP3 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 6 GHz amplifi er.


Hittite HMC311LP3 InGaP HBT Gain Block MMIC Amplifier Datasheet - cover page
Brand
Hittite
Category
amplifier
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
257 KB
Published
09 August, 2012
Updated
30 September, 2023
MD5 checksum
2471E3464075DAB89C4A31F6C4760071

About this manual

The HMC311LP3 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier operating from DC to 6.0 GHz. Packaged in a 3 x 3 mm QFN, this device offers 14.5 dB of gain and an output IP3 of +30 dBm while requiring only 56 mA from a +5V supply. It is designed to be used as a cascadable 50 Ohm gain stage or to drive the LO of HMC mixers with up to +17 dBm output power.

What's inside

  • General Description
  • Features
  • Typical Applications
  • Electrical Specifications
  • Absolute Maximum Ratings
  • Outline Drawing
  • Application Circuit
  • Pin Descriptions
  • Evaluation PCB

Specifications

Frequency RangeDC - 6.0 GHz
Gain14.5 dB
Output IP3+30 dBm
Supply Current56 mA
Package3 x 3 x 1 mm QFN
Operating Temperature-40 to +85 °C
Collector Bias Voltage+7.0 Vdc

Frequently asked questions

What is the supply voltage for the HMC311LP3?

The device requires a +5V supply.

Can the HMC311LP3 drive HMC mixers?

Yes, it can drive the LO of HMC mixers with up to +17 dBm output power.

What is the maximum junction temperature?

The maximum junction temperature is 150 °C.

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