STPSC406 is an ultrahigh performance power Schottky diode from ST. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
The STPSC406 is a 600 V power Schottky silicon carbide (SiC) diode manufactured using a silicon carbide substrate. It is specifically dedicated to PFC boost diode applications, offering ultrahigh performance with no reverse recovery and switching behavior independent of temperature. The device is available in TO-220AC and DPAK packages.
| Repetitive peak reverse voltage | 600 V |
|---|---|
| Forward rms current (DPAK) | 14 A |
| Forward rms current (TO-220AC) | 3.4 A |
| Non repetitive surge current (TO-220AC) | 40 A |
| Operating junction temperature | -40 to +175 °C |
| Junction to case thermal resistance (TO-220AC) | 5.5 °C/W |
| Junction to case thermal resistance (DPAK) | 4.5 °C/W |
The device can operate with a maximum junction temperature of +175°C.
The recommended torque for the TO-220AC package is 0.4 to 0.6 N-m.