The STPSC1006 is a 600V power Schottky silicon carbide diode from ST, which has no or negligible reverse recovery, temperature independent switching characteristics, and is particularly suitable for PFC boost diode function
The STPSC1006 is a 600 V power Schottky silicon carbide (SiC) diode manufactured by STMicroelectronics. It features negligible reverse recovery and switching behavior independent of temperature, making it particularly suitable for PFC boost diode functions in hard switching conditions.
This document provides absolute ratings, static electrical characteristics, thermal resistance data, and package dimensions for the TO-220AC and D?PAK variants.
| Repetitive peak reverse voltage | 600 V |
|---|---|
| Forward rms current | 18 A |
| Average forward current (Tj = 115 °C) | 10 A |
| Operating junction temperature range | -40 to +175 °C |
| Junction to case thermal resistance (TO-220AC) | 2 °CIW |
The device can operate with a maximum junction temperature of +175°C.
You should apply a torque between 0.4 and 0.6 N-m to secure the device.
The flat zone must be no less than 2mm long.