The STPSC806 is a 600V ultrahigh performance power Schottky diode from ST. It features no or negligible reverse recovery, temperature independent switching behaviour, and is particularly suitable for use in PFC boost diode applications.
The STPSC806 is a 600 V power Schottky silicon carbide (SiC) diode manufactured using a silicon carbide substrate. It features negligible reverse recovery and switching behavior that is independent of temperature, making it particularly suitable for PFC boost diode functions in hard switching conditions. The device is available in TO-220AC and D2PAK packages.
| Repetitive peak reverse voltage | 600 V |
|---|---|
| Forward rms current | 18 A |
| Storage temperature range | -55 to +175 °C |
| Operating junction temperature | -40 to +175 °C |
| Junction to case thermal resistance | 2.4 °C/W |
| Total capacitive charge | 10 nC |
It is particularly suitable for use as a PFC boost diode in hard switching conditions.
No, due to the Schottky construction, no recovery is shown at turn-off.