STPSC1206 600V power Schottky silicon carbide diode features no reverse recovery, switching behavior independent of temperature, dedicated to PFC boost diode
The document describes the STPSC1206D, a 600 V power Schottky silicon carbide (SiC) diode designed specifically for PFC boost applications. Utilizing wide bandgap material, these diodes exhibit negligible reverse recovery characteristics that are independent of temperature, significantly reducing switching power losses in associated MOSFETs and increasing overall application efficiency compared to hard-switching circuits.
| Repetitive peak reverse voltage | 600 V |
|---|---|
| Forward rms current (Tj = 110 °C) | 30 A |
| Average forward current (Tc = 110 °C, δ=0.5) | 12 A |
| Surge non repetitive forward current (tp = 10 ms) | 40 A |
| Repetitive peak forward current (Tj=105°C, T)=150°C) | 50 A |
| Storage temperature range | -55 to +175 °C |
| Operating junction temperature | -40 to +175 °C |
| Junction to case thermal resistance | 1.75 °CIW |
The device is available in a TO-220AC package.
No, the device exhibits no or negligible recovery characteristics.