STMicroelectronics STPSC606 600V Power Schottky SiC Diode Datasheet

STPSC606 is a 600 V power Schottky silicon carbide diode with no or negligible reverse recovery, temperature independent switching behavior and dedicated to PFC boost diode.

Brand: STMicroelectronics
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 8
File format: PDF
File size: 100 KB
Published: 09 August, 2012
Updated: 30 September, 2023
MD5 checksum: 924CD16D5C254116F2BD1E839ABCDF3C
PDF: STMicroelectronics STPSC606 600V Power Schottky SiC Diode Datasheet PDF

About this manual

The STPSC606 is a 600 V power Schottky silicon carbide (SiC) diode manufactured using a silicon carbide substrate. It is designed specifically for PFC boost diode applications, offering ultrahigh performance with negligible reverse recovery and switching behavior that is independent of temperature. The device is available in TO-220AC and D2PAK packages.

What's inside

Features
Description
Absolute ratings
Static electrical characteristics
Thermal resistance
Package information
Ordering information

Specifications

Repetitive peak reverse voltage	600 V
Forward rms current	18 A
Average forward current	6 A
Operating junction temperature range	-40 to +175 °C
Junction to case thermal resistance	2.8 °C/W
Total capacitive charge	6 nC

Frequently asked questions

What is the maximum operating junction temperature for this diode?

The device can operate with a junction temperature range of -40 to +175 °C.

How much torque is recommended when tightening the package?

You should apply a recommended torque between 0.4 and 0.6 N-m.

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