The IS20* series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages.
This document provides technical specifications for the IS20x, ISD20x, and ISQ20x series of high density phototransistor optically coupled isolators. These components consist of infrared light emitting diodes and NPN silicon photo transistors in dual in line plastic packages.
| Lead Soldering Temperature | 260°C (1/16 inch from case for 10 secs) |
|---|---|
| Input Forward Voltage | Typical 1.65V at 50mA |
| Output Collector-emitter Breakdown Voltage | 70V minimum |
| Input to Output Isolation Voltage | 5.3kV minimum |
The devices can operate at temperatures up to 100°C.
The output transistor has a maximum power dissipation of 150mW.