The L6392 is a high-voltage high and low side driver with features including high voltage rail up to 600V, dV/dt immunity of ±50V/nsec, driver current capability of 290mA source - 430mA sink, fast switching times, 3.3V and 5V TTL/CMOS inputs, integrated bootstrap diode, operational amplifier for current sensing, adjustable dead-time, interlocking function, compact layout, and bill of material reduction.
The L6392 is a high-voltage half-bridge gate driver designed for N-channel Power MOSFET or IGBT applications. It features a high voltage rail capability up to 600 V and includes an integrated bootstrap diode with BCD 'OFF-LINE' technology. The device supports 3.3 V and 5 V TTL/CMOS inputs with hysteresis for easy interfacing with microcontrollers or DSPs.
| Supply voltage (VCC) | 12.5 V to 20 V |
|---|---|
| DC output voltage (VOUT) | -9 V to 580 V |
| Junction temperature range | -40 °C to 125 °C |
| Driver current capability (source) | 290 mA |
| Driver current capability (sink) | 4830 mA |
| Rise time (CL = 1nF) | 75 ns to 120 ns |
| Fall time (CL = 1nF) | 35 ns to 70 ns |
The device supports a high voltage rail up to 600 V.
The logic inputs are CMOS/TTL compatible down to 3.3 V.