This document introduces the features and characteristics of ST's L6384E high-voltage half bridge driver product, including high voltage rail range, driver current capability, switching time, logic input type, dead time setting, under voltage lockout, integrated bootstrap diode, and capacitor clamping.
The L6384E is a high-voltage device manufactured with BCD OFF-LINE technology, designed to drive N-channel Power MOS or IGBT in Half-Bridge configurations. It features an internal bootstrap structure that replaces the external diode and includes logic inputs compatible with CMOS/TTL standards.
Key electrical characteristics include a supply voltage rail up to 600V, driver current capabilities of 400mA source and 650mA sink, and switching times of 50ns rise and 30ns fall. The device offers adjustable dead time via an external resistor or voltage level on the dedicated control pin.
| Output voltage (Vout) | -3 to 600 V |
|---|---|
| Supply voltage (Vcc) | -0.3 to 14.6 V |
| Floating supply voltage (Vboot) | -1 to 600 V |
| Source current capability | 400 mA |
| Sink current capability | 650 mA |
| Rise time (typical) | 50 ns |
| Fall time (typical) | 30 ns |
| Total power dissipation (Tj=85°C) | 750 mW |
| Junction temperature (max) | 150 °C |
The device supports an output voltage range from -3V up to 600V.
Yes, it has a Half-Bridge Driver structure that enables driving N-channel Power MOS or IGBT.
Yes, it features an integrated bootstrap driver structure that simplifies high-frequency operation.