The L6387E is a high-voltage high and low side driver from ST company, with 600V voltage rail, dV/dt immunity ±50V/nsec, 400mA source, 650mA sink, 50/30nsec rise/fall time, CMOS/TTL Schmitt trigger inputs, internal bootstrap diode, outputs in phase with inputs, interlocking function and other features.
The L6387E is a high-voltage device manufactured with BCD OFF-LINE technology, designed to drive independent referenced N-Channel Power MOS or IGBTs. It features a high-side floating section capable of working with voltage rails up to 600V and includes CMOS/TTL compatible logic inputs with interlocking functions to prevent simultaneous turn-on of both power switches.
The device incorporates an internal bootstrap driver that replaces the need for an external fast recovery diode, utilizing a patented integrated structure with a high-voltage DMOS. Key electrical characteristics include a maximum output slew rate of 50 V/ns, switching times of 50/30 ns, and short-circuit current capabilities of 400 mA source and 650 mA sink.
| Maximum output voltage | 600 V |
|---|---|
| dV/dt immunity | +50 V/nsec |
| Source current capability | 400 mA |
| Sink current capability | 650 mA |
| Rise time | 50 ns |
| Fall time | 30 ns |
The device supports a high voltage rail up to 600 V.
Yes, it features an internal bootstrap diode to avoid the need for an external fast recovery diode.
The driver provides 400 mA source and 650 mA sink short-circuit current.