The L6390 is a high-voltage half bridge driver for N-channel Power MOSFETs or IGBT. It features a high-voltage rail, integrated operational amplifier and comparator for advanced current sensing and fault protection.
The L6390 is a high-voltage device manufactured with BCD™ 'offline' technology. It serves as a single-chip half bridge gate driver designed for N-channel Power MOSFETs or IGBTs, featuring a high-side section capable of standing up to 600 V.
Key features include dV/dt immunity of ±50 V/nsec, integrated bootstrap diode, and an operational amplifier suitable for advanced current sensing. The device also incorporates a comparator for fault protection against overcurrent and overtemperature, along with smart shutdown and adjustable deadtime functions.
| High-voltage rail | up to 600 V |
|---|---|
| dV/dt immunity | ±50 V/nsec |
| Driver current source | -290 mA |
| Driver current sink | -430 mA |
| Switching time rise/fall | 75/35 nsec |
| Switching frequency | 800 kHz |
The device supports 3.3 V and 5 V TTL/CMOS inputs.
Yes, it embeds an operational amplifier suitable for advanced current sensing.