The L6386E is a high-voltage high and low side driver with features such as high voltage rail, dV/dt immunity, driver current capability, fast switching times, CMOS/TTL inputs, and under-voltage lockout.
The L6386E is a high-voltage device manufactured with BCD off-line technology, designed to drive independent referenced channel power MOS or IGBT. It features a high-side floating section capable of working with a voltage rail up to 600 V and logic inputs compatible with CMOS/TTL.
| Output voltage | -3 to 580 V |
|---|---|
| Supply voltage | -0.3 to +18 V |
| Floating supply voltage | -1 to 618 V |
| Switching frequency | 400 kHz |
| Fall time | 30 ns |
The maximum junction temperature is 150 °C.
The quiescent current is typically 250 μA to 320 μA when Vcc is 15 V.