This document is an instruction manual for VNN1NV04P-E, VNS1NV04P-E OMNIFET II fully autoprotected Power MOSFET, which introduces the characteristics of the product, including linear current limitation, thermal shutdown, short circuit protection, integrated clamp, low current from input pin, diagnostic feedback through input pin, ESD protection, direct access to the gate of the Power MOSFET (analog driving), etc.
The VNN1NVO4P-E and VNS1NVO4P-E are monolithic OMNIFET II fully autoprotected Power MOSFETs designed for direct replacement of standard Power MOSFETs in applications from DC up to 50 kHz. These devices are built in STMicroelectronics VIPower MO-3 Technology and include features such as linear current limitation, thermal shutdown, short circuit protection, and an integrated overvoltage clamp to protect the chip in harsh environments.
The devices are available in SOT-223 and SO-8 packages. Key electrical characteristics include a maximum on-state resistance of 250 mΩ per channel, a typical current limitation of 1.7 A, and a drain-source clamp voltage of 40 V. Fault feedback can be detected by monitoring the voltage at the input pin, and the devices offer low current drawn from the input pin along with ESD protection.
| Max on-state resistance (perch.) | 250 mΩ |
|---|---|
| Current limitation (typ) | 1.7 A |
| Drain-source clamp voltage | 40 V |
| Operating junction temperature | Internally limited |
| Storage temperature | -55 to 150 °C |
| Total dissipation at Tj=25 °C | 8.3 W |
| Drain current | Internally limited |
| Reverse DC output current | -3 A |
These devices are intended for applications from DC up to 50 kHz.
Fault feedback can be detected by monitoring the voltage at the input pin.