STMicroelectronics VNL5160N3-E/VNL5160S5-E OMNIFET III Datasheet

The VNL5160N3-E and VNL5160S5-E are monolithic devices, made using STMicroelectronics® VIPower® Technology, intended for driving resistive or inductive loads with one side connected to the battery.


STMicroelectronics VNL5160N3-E/VNL5160S5-E OMNIFET III Datasheet - cover page
Brand
STMicroelectronics
Document type
Datasheet
Language
English
Pages
26
File format
PDF
File size
497 KB
Published
08 August, 2012
Updated
30 September, 2023
MD5 checksum
C6200693A6D45F661534506BA69AB750

About this manual

The VNL5160N3-E and VNL5160S5-E are monolithic devices made using STMicroelectronics VIPower Technology. They are intended for driving resistive or inductive loads with one side connected to the battery, specifically designed for automotive signal lamps such as R10W or 2x R5W.

What's inside

  • Block diagrams and pins configurations
  • Absolute maximum rating
  • Electrical characteristics
  • Application information
  • Package and PC board thermal data
  • Package and packing information

Frequently asked questions

What is the maximum DC drain current for these devices?

The device limits the DC drain current to a maximum of 3.5A.

Is there protection against overtemperature conditions?

Yes, built-in thermal shutdown protects the chip from overtemperature and short circuit.

What is the junction operating temperature range?

The device can operate with a junction temperature between -40 and 150 °C.

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