VNS3NV04D-E is an OMNIFET II fully autoprotected Power MOSFET with features like linear current limitation, thermal shut down, short circuit protection, integrated clamp, etc. It is designed for DC up to 50KHz applications and offers fault feedback and ESD protection.
The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. Designed in STMicroelectronics VIPower M0-3 Technology, it is intended for the replacement of standard Power MOSFETs in DC up to 50KHz applications. The device includes built-in protection features such as thermal shutdown, linear current limitation, and overvoltage clamp to operate safely in harsh environments.
| On-State resistance (per ch.) | 120 mQ |
|---|---|
| Current limitation (typ) | 3.5A |
| Drain-Source clamp voltage | 40V |
| Operating junction temperature | Internally limited |
| Storage temperature | -55 to 150 °C |
| Package | SO-8 |
The maximum On-State resistance per channel is 120 mΩ.
The typical current limitation is 3.5 A.
The maximum Drain-Source clamp voltage is 40 V.