VNS1NV04D is a fully autoprotected power MOSFET device with features like linear current limitation, thermal shutdown, short circuit protection, integrated clamp, low current drawn from input pin, diagnostic feedback through input pin, etc. It is designed for DC up to 50KHz applications and can replace standard power MOSFETs.
The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. It is designed for replacement of standard Power MOSFETs in applications ranging from DC up to 50kHz. The device integrates built-in thermal shutdown, linear current limitation, and overvoltage clamp protection to ensure operation in harsh environments.
Key features include fault feedback detectable via the input pin, ESD protection, and direct access to the gate for analog driving. The datasheet provides absolute maximum ratings, electrical characteristics, protection features, and application circuit diagrams.
| Drain-source Voltage | 40 V |
|---|---|
| Input Current | +/-20 mA |
| Reverse DC Output Current | 3 A |
| Total Dissipation at Tj=25°C | 4 W |
| Operating Junction Temperature | Internally limited |
| Storage Temperature | -55 to 150 °C |
| Drain-source Clamp Voltage | 45 V |
| Static Drain-source On Resistance | 250 mΩ |
| Drain Current Limit | 1.7 to 3.5 A |
The device is intended for replacement of standard Power MOSFETs from DC up to 50KHz applications.
In the case of an overtemperature fault, the device tries to sink a diagnostic current through the INPUT pin to indicate the condition.
Overtemperature cutout occurs in the range 150 to 190 °C, with a typical value of 170 °C.
Yes, the device is compatible with standard Power MOSFETs and can be used as a switch from DC to 50KHz.