The datasheet provides a detailed introduction to the characteristics of VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04, including linear current limitation, thermal shutdown, short circuit protection, integrated clamp, low current input pin, diagnostic feedback pin, ESD protection, direct access to Power MOSFET gate (analog driving) and compatibility with standard Power MOSFETs
The VNB14NV04, VND14NV04, VND14NV04-1, and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology. They are intended for replacement of standard power MOSFETS in DC to 50 KHz applications. These devices feature built-in thermal shutdown, linear current limitation, and overvoltage clamp to protect the chip in harsh environments.
| Turn-off delay time | 450 ns (Typ) |
|---|---|
| Over temperature shutdown | 150 °C (Min) |
| Operating junction temperature | Internally limited |
The operating junction temperature is internally limited.
The operating junction temperature is internally limited to a range of -40 to 150 °C.
The device triggers an over temperature shutdown between 150 and 200 °C, with a typical value of 170 °C.
When overheating, the device sinks a diagnostic current of up to 20 mA through the input pin.