This datasheet provides the detailed technical information of OMNIFET VNB14N04, VNK14N04FM and VNV14N04, including the package type, pin configuration, electrical parameters, package dimensions, application circuits and so on.
This document describes the VNB14N04, VNK14NO4FM, and VNV14N04 devices, which are monolithic 'OMNIFET' power MOSFETs made using STMicroelectronics VIPower technology. These devices are designed to replace standard power MOSFETs in DC to 50 kHz applications by integrating protection features directly into the chip.
| Drain-source voltage (VDS) | 42 V |
|---|---|
| Operating junction temperature (Tj) | Internally limited |
| Overtemperature shutdown threshold (Tisn) | 150 C |
The device has an internally limited operating junction temperature.
Overtemperature cutout occurs when the junction reaches a minimum of 150 C.