This document is about VNP35N07FI VNB35N07/VNV35N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET. It mainly introduces the technical features of the product, including linear current limitation, thermal shutdown, short circuit protection, integrated clamp, low current drawn from the input pin, diagnostic feedback through the input pin, ESD protection, direct access to the gate of the power MOSFET (analog driving), and compatibility with standard power MOSFETs.
The document details three monolithic devices (VNP35N07FI, VNB35N07, and VNV35N07) made using STMicroelectronics VIPower MO Technology. These devices are intended for replacement of standard power MOSFETs in DC to 50 KHz applications.
| Drain-source Voltage (VDS) | 70 V |
|---|---|
| Static Drain-source On Resistance (Rds(on)) | 0.028 Ohm |
| Continuous Drain Current (ID) | 35 A |
| Operating Junction Temperature (Tj) | Internally Limited |
| Storage Temperature Range (Tstg) | -55 to 150 °C |
The device integrates an internal overvoltage clamp protection set at 70V.
The device includes a linear current limiter circuit that limits the drain current Id to Ilim regardless of the Input pin voltage.
Overtemperature cutout occurs at a minimum of 150°C.