The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. These two diode array configurations allow the designer maximum flexibility for circuit design and board layout. Since each diode within the array has individual anode and cathode connections the device may be used in a variety of applications. Also, due to the array's monolithic construction the diode electrical parameters are very closely matched. Both devices are available in ceramic DIP and flatpack and can be processed to Linfinity's S level, JANTXV, JANTX, or JAN equivalent flows.
This document describes the SG6100/SG6511 and SG6101/SG6510 monolithic diode array circuits from Linfinity Microelectronics. The SG6100/SG6511 configuration includes 7 straight through diodes, while the SG6101/SG6510 configuration features 8 straight through diodes.
| Breakdown Voltage (Vbr) | 75 V minimum |
|---|---|
| Current Capability per Diode | 100mA |
| Switching Speeds | < 5ns |
| Leakage Current (Max) | < 25nA |
The SG6100/SG6511 is configured with 7 straight through diodes.
The SG6101/SG6510 has 8 straight through diodes.