STMicroelectronics L6327/L6332 GMR Preamplifier Datasheet

This document provides preliminary information on a new product with features including selectable current bias or voltage bias, differential voltage sense architecture, 6 or 4 channel versions, 38-pin TSSOP package, internal reference resistor, read channel -3dB bandwidth > 400MHz, input equivalent preamplifier voltage noise 0.5nV/rtHz, etc.


STMicroelectronics L6327/L6332 GMR Preamplifier Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
4
File format
PDF
File size
55 KB
Published
07 August, 2012
Updated
28 September, 2023
MD5 checksum
0CD3B71F1066C49D472789D9E60DD6D5

About this manual

The L6327/L6332 is a BICMOS monolithic integrated circuit GMR differential preamplifier designed for use with four-terminal magneto-resistive GMR read/inductive write heads. It is available as either a six (L6327) or four (L6332) channel device and operates from a +5V supply and a -5V supply.

What's inside

  • Power Supplies
  • Current bias or voltage bias
  • Read channel bandwidth
  • MR bias current programmable
  • Programmable gain
  • Write frequency
  • Serial interface
  • Thermal asperity detection
  • Package dimensions
  • Ordering numbers

Specifications

Supply Voltage+5Vdc, -5Vdc
Read channel -3dB bandwidth> 400MHz
Write frequencyup to 300 MHz
Rise/Fall time0.6ns
Package38-pin TSSOP

Frequently asked questions

What is the maximum write frequency supported by the L6327/L6332?

The device supports write frequencies up to 300 MHz under specific head conditions.

What is the nominal input equivalent preamplifier voltage noise?

The input equivalent preamplifier voltage noise is 0.5nV/rtHz nominal.

What is the rise and fall time for the write current?

The rise and fall time is 0.6ns when the write current is 40mA peak-to-peak.

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