The L6386 is a high voltage driver with 400mA source drive capability and 650mA sink drive capability, which can drive independent reference polarity power MOSFET or IGBT. The upper (floating) section is enabled to work with voltage Rail up to 600V. The logic inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.
The L6386 is a high-voltage device manufactured with BCD OFF-LINE technology, designed to drive independent referenced Channel Power MOS or IGBTs. It features a driver structure capable of handling a high-voltage rail up to 600V, with logic inputs that are CMOS/TTL compatible for ease of interfacing with controlling devices.
The device includes an integrated bootstrap diode to supply the high-voltage section, replacing the need for an external fast recovery diode. It offers driver current capabilities of 400 mA source and 650 mA sink, with switching times of 50/30 nsec rise/fall with a 1nF load. The chip also incorporates under-voltage lockout on both the lower and upper driving sections.
| High-Voltage Rail | Up to 600V |
|---|---|
| Driver Current Sink | 650 mA |
| Switching Times | 50/30 nsec |
| Junction Temperature | 150 °C |
| Logic Input Type | CMOS/TTL |
| Supply Voltage (Vcc) | 17 V |
The device supports a high-voltage rail up to 600V.
No, it features a patented integrated structure that replaces the external diode.
The low level logic threshold is 1.5V and the high level is 3.6V.